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TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 1 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? point to point radio ? millimeter - wave communication s ? military & space product features functional block diagram ? f requency range : 37 - 40 ghz ? o utput p ower : 32.5 dbm psat, 31.5 dbm p1db ? gain : 26 dbm typical ? toi: 38 dbm @ 18 dbm output/tone ? integrated power detector ? bias: vcc = 6 v , icc = 90 0 ma typical ? dimension: 2.95 x 2.95 x 0.1 mm general description bond pad configuration the triquint TGA4542 is a 37 - 40 ghz power amplifier designed using triquints power phemt production process. the tga454 2 typically provides 31.5 dbm of output power at 1db gain compress ion with small signal gain of 26 db. third order intercept is 38 dbm at 18 dbm output/tone . the TGA4542 is ideally suited for point - to - point radio , k a - band communications , and millimeter - wave communications. lead - free and rohs compliant. evaluation boards are available upon request. bond pad # function label 1 rf in 2, 14 vg 3, 4, 5, 6, 10, 11, 12, 13 vd 7 rf out 8 vdet 9 v ref ordering i nfo rmation part no. eccn description tg a4542 3a001.b.2.e 37 - 40 ghz 1w power amplifier standard order qty = 5 0 pieces . 1 7 8 10 9 2 6 3 4 5 14 13 12 11 vg vd1 vd2 vd3 vd4 vg rf in rf out vd1 vd2 vd3 vd4 vref vdet
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 2 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain to gate voltage, vd - vg 10v drain voltage, vd +6.5 v gate voltage, vg - 4 to 0 v drain current , id 2086 ma gate current, ig - 8.2 to 113 ma power dissipation, pdiss 13.6 w rf input power, cw, 50?, t=25c 26 dbm channel temperature, tch 200c mounting temperature (30 seconds) 320c storage temperature - 40 to 150 ? c operation of this device outside the parameter ranges given above may cause permanent damage. recommended operating conditions parameter min typ max unit s operating temp. range - 40 +25 +85 ? c vd 6 .0 v id 900 ma id (under rf drive) 15 00 ma vg - 0.7 v electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25 oc, vd = 6 v , id= 90 0 ma , vg = - 0.7 v typical. parameter conditions min typ max unit s operational frequency range 37 40 g hz gain 26 db input return loss 8 db output return loss 1 5 db output power saturation 32 . 5 db m output power 1 db gain compression 3 1.5 dbm output toi 18 dbm output/tone 38 db m gain temperature coefficient - 0.0 4 db/c power temperature coefficient 1db gain compression - 0.0 13 db/c
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 3 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? specifications thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of thermal spreader small - signal under rf drive tbase = 70 c jc = 7.6 c/w jc = 10.4 c/w channel temperature (tch), and median lifetime (tm) tbase = 70 c, vd = 6 v, id = 900 ma, pdiss = 5.4 w tch = 111 c tm = 2.2 e+7 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 70 c, vd = 6 v, id = 1500 ma, pout = 32.5 dbm, pdiss = 7.2 w tch = 145 c tm = 1.8e+6 hours note: thermal model includes 38um ausn bondline and 500um cumo thermal spreader 1 .e+ 04 1 .e+ 05 1 .e+ 06 1 .e+ 07 1 .e+ 08 1 .e+ 09 1 .e+ 10 1 .e+ 11 1.e+12 1 .e+ 13 1 .e+ 14 1 .e+ 15 25 50 75 100 125 150 175 200 median lifetime, tm (hours) channel temperature, tch ( c) median lifetime (tm) vs. channel temperature (tch) fet 5
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 4 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ?
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 5 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 10 12 14 16 18 20 22 24 26 28 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 return loss (db) gain (db) frequency (ghz) s - parameters vs. frequency vd = 6v, id = 900ma, vg = - 0.7v typical, +25 c gain irl orl - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 0 5 10 15 20 25 30 35 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 return loss (db) gain (db) frequency (ghz) s - parameters vs. frequency vd = 6v, id = 900ma, vg = - 0.7v typical, +25 c gain irl orl 24 25 26 27 28 29 30 31 32 33 34 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 output power (dbm) frequency (ghz) output power vs. frequency vd = 6 v, id = 900 ma, vg = - 0.7 v typical, +25 c psat p1db 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 35 - 20 - 18 - 16 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 current (ma) output power (dbm), gain (db) input power (dbm) pout, gain, id vs. pin @ 38 ghz vd = 6 v, id = 900 ma, vg = - 0.7 v typical, +25 c pout gain id - 54 - 51 - 48 - 45 - 42 - 39 - 36 - 33 - 30 - 27 - 24 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 im3 (dbc) pout/tone (dbm) im3 vs. pout / tone vs. frequency vd = 6 v, id = 900 ma, vg = - 0.7 v typical, +25 c 37 ghz 38 ghz 39 ghz 40 ghz 30 31 32 33 34 35 36 37 38 39 40 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 output toi (dbm) frequency (ghz) toi vs. pout/tone vs. frequency vd = 6 v, id = 900 ma, vg = - 0.7 v typical, +25 c pout/tone = 16 dbm pout/tone = 18 dbm pout/tone = 20 dbm
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 6 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance 23 24 25 26 27 28 29 30 31 32 33 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 p1db (dbm) frequency (ghz) p1db vs. frequency vs. id vd = 5 - 6 v, id = 900 - 1100 ma, +25 c 5v900ma 5v1100ma 6v900ma 6v1100ma 20 21 22 23 24 25 26 27 28 29 30 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 gain (db) frequency (ghz) gain vs. frequency vs. id vd = 5 - 6v, id = 900 - 1100 ma, +25 c 5v900ma 5v1100ma 6v900ma 6v1100ma 30 31 32 33 34 35 36 37 38 39 40 41 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 otoi@18 dbm pout/tone (dbm) frequency (ghz) toi vs. frequency vs. id vd = 5 - 6 v, id = 900 - 1100 ma, +25 c 5v900ma 5v1100ma 6v900ma 6v1100ma 10 12 14 16 18 20 22 24 26 28 30 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 gain (db) frequency (ghz) gain vs. frequency vs. temperature vd = 6 v, id = 900 ma, vg = - 0.7 v typical - 40 c +25 c +85 c 23 24 25 26 27 28 29 30 31 32 33 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature vd = 6 v, id = 900 ma, vg = - 0.7 v typical - 40 c +25 c +85 c 30 31 32 33 34 35 36 37 38 39 40 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 otoi@18 dbm pout/tone (dbm) frequency (ghz) toi vs. frequency vs. temperature vd = 6v, id = 900 ma, vg = - 0.7 v typical - 40 c +25 c +85 c
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 7 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance 0.01 0.1 1 10 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 vdiff (v) output power (dbm) power detector vs. pout vs. frequency vd = +6v, id = 900 ma, vg = - 0.7 v typical, 25 c 37 ghz 38 ghz 39 ghz 40 ghz
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 8 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? bond pad description bond pad symbol description 1 rf in input, matched to 50 ohms 2, 14 vg gate voltage. esd protection included; bias network is required ; ; see application circuit on page 7 as an example. 3, 4, 5, 6, 10, 11, 12, 13 vd drain voltage. bias network is required; must be biased from both sides; see application circuit on page 7 as an example. 1 2 3 4 5 6 7 8 9 10 11 12 13 14
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 9 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? 7 rf out output, matched to 50 ohms . 8 v det detector diode output voltage. varies with rf output power. 9 v ref reference diode output voltage. application circuit vd must be biased from both side s . vg can be biased from either side. bias - up procedure bias - down procedure vg set to - 1.5 v turn off rf supply vd set to +6 v reduce vg to - 1.5v. ensure id ~ 0 ma adjust vg more p ositive until quiescent id is 90 0 ma. this will be ~ vg = - 0.7 v turn vd to 0 v apply rf signal to rf input turn vg to 0 v vref id = 900 ma vdet vdiff rf out rf in 11 12 13 14 5 4 3 6 2 9 10 8 7 1 vg -0.7 v typical c1 100 pf c7 0.01 uf c2 100 pf c3 100 pf c4 100 pf c5 100 pf c6 100 pf c8 0.01 uf c9 0.01 uf c10 0.01 uf c11 0.01 uf c12 0.01 uf r1 10 ohm c13 1 uf c14 1 uf r2 10 ohm r3 10 ohm c15 1 uf r5 40k ohm r4 40k ohm 6 v
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 10 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? application circuit bill of material ref des value description manufacturer part number c1 , c2, c3, c4, c5, c6 100 pf cap, 50v, 10 %, single layer cap various c7, c8, c9, c10, c11, c12 0.01 f cap, 50v, 10%, smd various c10 0.01 uf c11 0.01 uf c12 0.01 uf c4 100 pf c5 100 pf c6 100 pf c7 0.01 uf c8 0.01 uf c9 0.01 uf c1 100 pf c2 100 pf c3 100 pf vg vd12 vd34 vg vd12 vd34 vg = -0.7 v typical vd = 6 v, id = 900 ma r1 10 ohm r2 10 ohm c14 1 uf c15 1 uf r3 10 ohm c13 1 uf c16 1 uf r4 10 ohm c17 1 uf r5 10 ohm rf in rf out
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 11 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information unit: millimeters thickness: 0.10 die x, y size tolerance: +/ - 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die bond pad symbol pad size 1 rf in 0.190 x 0.090 2, 14 vg 0.090 x 0.090 3, 4, 5, 11, 12, 13 vd 0.093 x 0.090 6, 10 vd 0.093 x 0. 1 90 7 rf out 0.190 x 0.09 0 8 vdet 0.090 x 0.09 0 9 vref 0.090 x 0.09 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 12 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? product compliance information esd information esd rating: class 0 value: passes 100 v test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability compatible with both lead - free (260 c max. reflow temp.) and tin/lead (245 c max. reflow temp.) soldering processes. rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? ? ? ? 15 h 12 br 4 0 2 ) free ? ? assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low - power applications. ? curing should be done in a c onvection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temperatures above 300 ? c to 3 - 4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used . ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long - term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wire.
TGA4542 37 - 40 ghz 1w power amplifier preliminary data sheet: rev - 9/15 /12 - 13 of 1 2 - disclaimer: subject to change without notice ? 20 12 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest spe cifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1.972.994.8465 email: info - sales@tqs.com fax: +1.972.994.8504 for technical questions and application information: email: info - networks@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contain ed herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change witho ut notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent r ights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving , or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

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